728x90 semiconductor, OPC65 interference * interference The overlapping of several waves to create or cancel new waves is called interference. The conditions for interference to occur must be coherent. In Young's double-slit experiment, interference fringes appear, showing constructive interference (bright parts) and destructive interference (dark parts). What matters is the presence of a single slit placed in front of the double slit(.. 2023. 1. 20. Diffraction & Refraction * Diffraction Diffraction is a phenomenon in which a wave spreads from the end of a small gap or returns to the shadow of an obstacle. Huygens principle is the principle that countless spherical waves are generated at each wavefront point, and the wavefront of the next moment is created by overlapping the countless spherical waves. When the slit width is greater than the wavelength, the diffract.. 2023. 1. 20. Maxwell's Equation Maxwell's equations may be combined to demonstrate how fluctuations in electromagnetic fields (waves) propagate at a constant speed in vacuum, c (299,792,458 m/s) Typically, the wave equation of an electromagnetic wave can be expressed as a combination of the following four equations. Maxwell's equations are a set of four partial differential equations that describe the behavior of electromagnet.. 2023. 1. 20. What is light? To understand light, we must first understand the properties of waves. The components of a wave are amplitude, frequency, period, and wavelength. Amplitude is the difference in height between the low and high points of a wave. Frequency is the number of oscillations per unit time. Wavelength is the distance between the top of the wave and the top of the wave. The speed of a wave can be expressed.. 2023. 1. 20. History of Transistor structure change this is a planar transistor lecture. Transitor History Transistor의 발명 이래로, 시장의 요구에 따라 계속 발전해 왔다. 고집적, 고효율, 고성능을 목표로 발전을 했으며 사용되는 영역은 군사 안보 분야를 넘어 일반인의 실생활에도 사용되게 되었다. 현재에 이르러서는 양산중인 반도체는 planar transistor와 finfet transistor, Gate All Around transistor가 있다. planar FET TR의 경우 GATE 한 면으로 E-field를 제어하기 때문에 미세한 컨트롤이 어렵고 전력소모도 심한 편이다. 하지만 finfet TR의 경우엔 GATE 3면으로 E-field를 제어하기 때문에 미세 조정이 가능하고 전력소모도 적다.. 2023. 1. 20. 이전 1 ··· 4 5 6 7 다음 728x90
